Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature

We present an experimental and theoretical study of the anomalous Hall effect (AHE) in MnAs epilayers grown over GaAs, with aim to identify intrinsic contribution AHE, which can be accurately evaluated using ab initio electronic structure calculations. Our magnetotransport measurements show a quadratic behavior resistivity longitudinal resistivity, characteristic scattering-independent processes, thus enabling comparison our The calculated Berry phase AHE is quantitative agreement measured these epilayers. Moreover, predicted anisotropic dependence on magnetization well reproduced.